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Articles (49)
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1

Enhanced transmission line model structures for accurate resistance evaluation of small-size contacts and for more reliable fabrication

Sawdai, D., Pavlidis, D., Cui, D.

Journal:

IEEE Transactions on Electron Devices

Année:

1999

Langue:

english

Fichier:

PDF, 655 KB

english, 1999

2

Push-pull circuits using n-p-n and p-n-p InP-based HBT's for power amplification

Sawdai, D., Pavlidis, D.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Année:

1999

Langue:

english

Fichier:

PDF, 227 KB

english, 1999

3

Ultrahigh-speed direct digital synthesizer using InP DHBT technology

Gutierrez-Aitken, A., Matsui, J., Kaneshiro, E.N., Oyama, B.K., Sawdai, D., Oki, A.K., Streit, D.C.

Journal:

IEEE Journal of Solid-State Circuits

Année:

2002

Langue:

english

Fichier:

PDF, 333 KB

english, 2002

4

SPIE Proceedings [SPIE Photonics West '98 Electronic Imaging - San Jose, CA (Saturday 24 January 1998)] Stereoscopic Displays and Virtual Reality Systems V - Software issues for PC-based stereoscopic displays: how to make PC users see stereo

Sawdai, Donald, Hamlin, Gregory J., Swift, David, Bolas, Mark T., Fisher, Scott S., Merritt, John O.

Année:

1998

Langue:

english

Fichier:

PDF, 1.30 MB

english, 1998

5

InP-based complementary HBT amplifiers for use in communication systems

Donald Sawdai, Dimitris Pavlidis

Journal:

Solid-State Electronics

Année:

1999

Langue:

english

Fichier:

PDF, 154 KB

english, 1999

6

Power performance of InP-based single and double heterojunction bipolar transistors

Sawdai, D., Yang, K., Hsu, S.S.-H., Pavlidis, D., Haddad, G.I.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Année:

1999

Langue:

english

Fichier:

PDF, 253 KB

english, 1999

7

Demonstration of a 311-GHz Fundamental Oscillator Using InP HBT Technology

Radisic, V., Sawdai, D., Scott, D., Deal, W.R., Linh Dang, Li, D., Chen, J., Fung, A., Samoska, L., Gaier, T., Lai, R.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Année:

2007

Langue:

english

Fichier:

PDF, 879 KB

english, 2007

8

An MMIC Pulse Generator Using Dual Nonlinear Transmission Lines

Kintis, M., Xing Lan, Flavia Fong, Sawdai, D., Kwok Loi, Kono, K., Gutierrez, A.

Journal:

IEEE Microwave and Wireless Components Letters

Année:

2007

Langue:

english

Fichier:

PDF, 186 KB

english, 2007

9

Ultrahigh-efficiency power amplifier for space radar applications

Quach, T.K., Watson, P.M., Okamura, W., Kaneshiro, E.N., Gutierrez-Aitken, A., Block, T.R., Eldredge, J.W., Jenkins, T.J., Kehias, L.T., Oki, A.K., Sawdai, D., Welch, R.J., Worley, R.D.

Journal:

IEEE Journal of Solid-State Circuits

Année:

2002

Langue:

english

Fichier:

PDF, 565 KB

english, 2002

10

[IEEE GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 - Baltimore, MD, USA (21-24 Oct. 2001)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) - Broadband class-E power amplifier for space radar application

Quach, T., Watson, P., Okamura, W., Kaneshiro, E., Gutierrez-Aitken, A., Block, T., Eldredge, J., Jenkins, T., Kehias, L., Oki, A., Sawdai, D., Welch, R., Worley, R.

Année:

2001

Langue:

english

Fichier:

PDF, 399 KB

english, 2001

11

[IEEE IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. - Palm Springs, CA, USA (2005.11.2-2005.11.2)] IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. - An indium phosphide X-band class-E power MMIC with 40% bandwidth

Watson, P., Quach, T., Axtel, H., Gutierrez-Aitken, A., Kaneshiro, E., Lee, W., Mattamana, A., Oki, A., Orlando, P., Patel, V., Sawdai, D.

Année:

2005

Langue:

english

Fichier:

PDF, 329 KB

english, 2005

12

[IEEE Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM - Nara, Japan (14-18 May 2001)] Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) - Ultra-efficient X-band and linear-efficient Ka-band power amplifiers using indium phosphide double heterojunction bipolar transistors

Quach, T., Okamura, W., Gutierrez-Aitken, A., Jenkins, T., Kaneshiro, E., Kehias, L., Sawdai, D., Watson, P., Welch, R., Worley, R., Yen, H.C.

Année:

2001

Langue:

english

Fichier:

PDF, 398 KB

english, 2001

13

[IEEE Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA (14-18 May 2000)] Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) - A 0.5 watt-40% PAE InP double heterojunction bipolar transistor K-band MMIC power amplifier

Kobayashi, K.W., Oki, A.K., Yang, L.W., Gutierrez-Aitken, A., Chin, P., Sawdai, D., Okamura, W., Lester, J., Kaneshiro, E., Gorssman, P.C., Sato, K., Block, T.R., Yen, H.C., Streit, D.C.

Année:

2000

Langue:

english

Fichier:

PDF, 383 KB

english, 2000

14

[IEEE GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 - Baltimore, MD, USA (21-24 Oct. 2001)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) - Ultra high speed direct digital synthesizer using InP DHBT technology

Gutierrez-Aitken, A., Matsui, J., Kaneshiro, E., Oyama, B., Sawdai, D., Oki, A., Streit, D.

Année:

2001

Langue:

english

Fichier:

PDF, 379 KB

english, 2001

15

[IEEE Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM - Nara, Japan (14-18 May 2001)] Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) - Integration of complementary NPN and PNP InAlAs/InGaAs HBTs

Delong Cui,, Pavlidis, D., Sawdai, D., Chin, P., Block, T.

Année:

2001

Langue:

english

Fichier:

PDF, 374 KB

english, 2001

16

[IEEE 61st Device Research Conference - Salt Lake City, UT, USA (23-25 June 2003)] 61st Device Research Conference. Conference Digest (Cat. No.03TH8663) - Metamorphic 6.0 Å In/sub 0.86/Al/sub 0.14/As/In/sub 0.86/Ga/sub 0.14/As double heterojunction bipolar transistors

Monier, C., Cavus, A., Sandhu, R., Sawdai, D., Lange, M., Gambin, V., Block, T., Gutierrez-Aitken, A.

Année:

2003

Langue:

english

Fichier:

PDF, 165 KB

english, 2003

17

[IEEE Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. - Notre Dame, IN, USA (June 21-23, 2004)] Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. - Planarized InP/InGaAs heterojunction bipolar transistors wlth f/sub MAX/ < 500 GHz

Sawdai, D., Chang, P.C., Gambin, V., Zeng, X., Yamamoto, J., Loi, K., Leslie, G., Barsky, M., Gutierrez-Aitken, A., Oki, A.

Année:

2004

Langue:

english

Fichier:

PDF, 116 KB

english, 2004

18

[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 22nd Annual Technical Digest 2000 - Seattle, WA, USA (5-8 Nov 2000)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084) - Low DC power, high gain-bandwidth product, coplanar Darlington feedback amplifiers using InAlAs/InGaAs heterojunction bipolar transistors

Delong Cui,, Sawdai, D., Shawn Hsu,, Pavlidis, D.

Année:

2000

Langue:

english

Fichier:

PDF, 433 KB

english, 2000

19

Low-frequency noise characteristics of p-n-p InAlAs/InGaAs HBTs

Hsu, S.S.H., Pavlidis, D., Sawdai, D.

Journal:

IEEE Electron Device Letters

Année:

2002

Langue:

english

Fichier:

PDF, 290 KB

english, 2002

20

Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs

Buttari, D., Chini, A., Meneghesso, G., Zanoni, E., Sawdai, D., Pavlidis, D., Hsu, S.S.H.

Journal:

IEEE Electron Device Letters

Année:

2001

Langue:

english

Fichier:

PDF, 75 KB

english, 2001

21

[IEEE International Conference on Indium Phosphide and Related Materials, 2005. - Glasgow, Scotland (May 8-12, 2005)] International Conference on Indium Phosphide and Related Materials, 2005. - Vertical scaling of planarized InP/InGaAs heterojunction bipolar transistors with f/sub T/< 350 GHz and f/sub max/ < 500 GHz

Sawdai, D., Chang, P.C., Gambin, V., Zeng, X., Wang, J., Barsky, M., Chan, B., Oyama, B., Gutierrez-Aitken, A., Oki, A.

Année:

2005

Langue:

english

Fichier:

PDF, 732 KB

english, 2005

22

[IEEE Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM - Nara, Japan (14-18 May 2001)] Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) - High performance, high yield InP DHBT production process for 40 Gbps applications

Sawdai, D., Kaneshiro, E., Gutierrez-Aitken, A., Grossman, P.C., Sato, K., Kim, W., Leslie, G., Eldredge, J., Block, T., Chin, P., Tran, L., Oki, A.K., Streit, D.C.

Année:

2001

Langue:

english

Fichier:

PDF, 388 KB

english, 2001

23

[IEEE 53rd ARFTG Conference Digest - Anaheim, CA, USA (1999.06.17-1999.06.18)] 53rd ARFTG Conference Digest - Modeling of Highly-Nonlinear HBT Characteristics using a Distributed Thermal Subcircuit Derived from Pulsed Measurements

Hsu, Shawn S.H., Sawdai, Donald, Pavlidis, Dimitris

Année:

1999

Langue:

english

Fichier:

PDF, 85 KB

english, 1999

24

[IEEE 2003 International Semiconductor Device Research Symposium - Washington, DC, USA (2003.12.10-2003.12.12)] International Semiconductor Device Research Symposium, 2003 - Advanced substrate/buffer layer polishing techniques to optimize the growth and performance of 6.1Angstrom InAs HBTs

Goorsky, M.S., Noori, A.M., Sandhu, R.S., Hayashim, S.L., Mescrole, E.D., Lange, M., Cavus, A., Monier, C., Hsing, R., Sawdai, D., Wojtowicz, M., Block, T.R., Gutierrez-Aitken, A.

Année:

2003

Langue:

english

Fichier:

PDF, 137 KB

english, 2003

25

First demonstration of monolithic InP-based HBT amplifier with PNP active load

Delong Cui,, Pavlidis, D., Hsu, S.S.H., Sawdai, D., Chin, P., Block, T.

Journal:

IEEE Electron Device Letters

Année:

2002

Langue:

english

Fichier:

PDF, 216 KB

english, 2002

26

[IEEE Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) - Davos, Switzerland (16-20 May 1999)] Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) - Properties of fully self-aligned InAlAs/InGaAs PNP HBTs with very thin bases

Sawdai, D., Zhang, X., Cui, D., Pavlidis, D., Bhattacharya, P.

Année:

1999

Langue:

english

Fichier:

PDF, 398 KB

english, 1999

27

[IEEE Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Japan (11-15 May 1998)] Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) - Power performance of PNP InAlAs/InGaAs HBTs

Sawdai, D., Zhang, X., Pavlidis, D., Bhattacharya, P.

Année:

1998

Langue:

english

Fichier:

PDF, 452 KB

english, 1998

28

[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 22nd Annual Technical Digest 2000 - Seattle, WA, USA (5-8 Nov 2000)] GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084) - K-band 76% PAE InP double heterojunction bipolar power transistors and a 23 GHz compact linear power amplifier MMIC

Okamura, W., Yang, L.W., Gutierrez-Aitken, A., Kaneshiro, E., Lester, J., Sawdai, D., Grossman, P.C., Kobayashi, K., Yen, H.C., Oki, A., Chin, P., Block, T.

Année:

2000

Langue:

english

Fichier:

PDF, 302 KB

english, 2000

29

[IEEE Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA (14-18 May 2000)] Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) - Hole impact ionization coefficient in [100]-oriented In/sub 0.53/Ga/sub 0.47/As based on pnp InAlAs/InGaAs HBTs

Buttari, D., Chini, A., Meneghesso, G., Zanoni, E., Sawdai, D., Pavlidis, D., Hsu, S.S.H.

Année:

2000

Langue:

english

Fichier:

PDF, 399 KB

english, 2000

30

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - InP double heterojunction bipolar transistor technology for 311 GHz oscillator and 255 GHz amplifier

Scott, Dennis W., Sawdai, Donald, Radisic, Vesna, Monier, Cedric, Dang, Linh, Li, Danny, Deal, William R., Lai, Richard, Gutierrez-Aitken, Augusto

Année:

2008

Langue:

english

Fichier:

PDF, 919 KB

english, 2008

31

[IEEE 2006 International Conference on Indium Phosphide and Related Materials - Princeton, NJ (May 7, 2006)] 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings - Sub-Micrometer InP/InGaAs Heterojunction Bipolar Transistors with fT = 400 GHz and fmax < 500 GHz

Scott, D.W., Chang, P.C., Sawdai, D., Dang, L., Wang, J., Barsky, M., Phan, W., Chan, B., Oyama, B., Gutierrez-Aitken, A., Oki, A.

Année:

2006

Langue:

english

Fichier:

PDF, 466 KB

english, 2006

32

[IEEE IEEE Lester Eastmann Biennial Conference - Newark, DE, USA (6-8 Aug. 2002)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices - DC and RF performance of InAs-based bipolar transistors at very low bias

Sawdai, D., Monier, C., Cavus, A., Block, T., Sandhu, R., Goorsky, M.S., Gutierrez-Aitken, A., Woodall, J., Wicks, G.

Année:

2002

Langue:

english

Fichier:

PDF, 550 KB

english, 2002

33

Demonstration of 184 and 255-GHz Amplifiers Using InP HBT Technology

Radisic, V., Sawdai, D., Scott, D., Deal, W.R., Linh Dang,, Li, D., Cavus, A., Fung, A., Samoska, L., To, R., Gaier, T., Lai, R.

Journal:

IEEE Microwave and Wireless Components Letters

Année:

2008

Langue:

english

Fichier:

PDF, 347 KB

english, 2008

34

[IEEE 2006 64th Device Research Conference - State College, PA, USA (2006.06.26-2006.06.28)] 2006 64th Device Research Conference - A 154-GHz Static Divider in 0.25 μm InP DHBT Technology

Phan, N., Sawdai, D., Oyama, B., Chang, P., Scott, D., Gutierrez-Aitken, A., Oki, A.

Année:

2006

Langue:

english

Fichier:

PDF, 2.01 MB

english, 2006

35

[IEEE 14th Indium Phosphide and Related Materials Conference (IPRM) - Stockholm, Sweden (12-16 May 2002)] Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) - Characterization and measurement of non-linear temperature rise and thermal resistance in InP heterojunction bipolar transistors

Grossman, P.C., Gutierrez-Aitken, A., Kaneshiro, E., Sawdai, D., Sato, K.

Année:

2002

Langue:

english

Fichier:

PDF, 280 KB

english, 2002

36

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - Advanced HBT microelectronics at Northrop Grumman Space Technology

Gutierrez-Aitken, A., Monier, C., Chang, P., Scott, D., Sato, K., Kaneshiro, E., Oyama, B., Chan, B., Kunkee, E., Loi, K., Sawdai, D., Cavus, A., Oki, A.

Année:

2008

Langue:

english

Fichier:

PDF, 499 KB

english, 2008

37

[IEEE Device Research Conference - Santa Barbara, CA, USA (24-26 June 2002)] 60th DRC. Conference Digest Device Research Conference - GaAs Schottky varactor diode optimization for high-performance nonlinear transmission lines

Sawdai, D., Ko, D., Kintis, M., Maas, S., Zhang, X., Valdes, S., Garber, E., Barber, G., Quach, E., Newman, J., Fong, F.

Année:

2002

Langue:

english

Fichier:

PDF, 115 KB

english, 2002

38

[IEEE 2005 International Conference on Indium Phosphate And Related Materials - Glasgow, Scotland (2005.05.8-2005.05.12)] International Conference on Indium Phosphide and Related Materials, 2005 - Production InP MMICs for low cost, high performance applications

Lai, R., Grundbacher, R., Sawdai, D., Uyeda, J., Biedenbender, M., Barsky, M., Gutierrez-Aitken, A., Cavus, A., Chin, P., Liu, P.H., Bhorania, R., Streit, D., Oki, A.

Année:

2005

Langue:

english

Fichier:

PDF, 858 KB

english, 2005

39

Technology and First Electrical Characteristics of Complementary NPN and PNP InAlAs/InGaAs Heterojunction Bipolar Transistors

Cui, Delong, Pavlidis, Dimitris, Sawdai, Donald, Chin, Patrick, Block, Tom

Journal:

Japanese Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 268 KB

english, 2002

40

Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy

M. D. Lange, A. Cavus, C. Monier, R. S. Sandhu, T. R. Block, V. F. Gambin, D. J. Sawdai, A. L. Gutierrez-aitken

Année:

2004

Langue:

english

Fichier:

PDF, 582 KB

english, 2004

41

[IEEE Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (1997.08.6-1997.08.6)] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97 - Performance optimization of PNP InAlAs/InGaAs HBTs

Sawdai,, Zhang,, Pavlidis,, Bhattacharya,

Année:

1997

Langue:

english

Fichier:

PDF, 639 KB

english, 1997

42

Strain relaxation and surface roughness of In[sub x]Al[sub 1−x]As graded buffer layers grown on InP for 6.05 Å applications

A. M. Noori, R. S. Sandhu, S. L. Hayashi, E. D. Meserole, V. Hardev, A. Cavus, M. Lange, C. Monier, R. Hsing, D. Sawdai, M. Wojtowicz, T. R. Block, A. Gutierrez-aitken, M. S. Goorsky

Année:

2004

Langue:

english

Fichier:

PDF, 824 KB

english, 2004

43

CANTILEVERED BASE InP DHBT FOR HIGH SPEED DIGITAL APPLICATIONS

A. L. Gutierrez-aitken, E. N. Kaneshiro, J. H. Matsui, D. J. Sawdai, J. K. Notthoff, P. T. Chin, A. K. Oki

Année:

2001

Langue:

english

Fichier:

PDF, 1.98 MB

english, 2001

44

[IEEE Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA (14-18 May 2000)] Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) - InP HBT and HEMT technology and applications

Oki, A.K., Streit, D.C., Lai, R., Gutierrez-Aitken, A., Chen, Y.C., Grundbacher, R., Grossman, P.C., Block, T., Chin, P., Barsky, M., Sawdai, D., Wojtowicz, M., Kaneshiro, E., Yen, H.C.

Année:

2000

Langue:

english

Fichier:

PDF, 195 KB

english, 2000

45

[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - Power performance of InGaAs/InP single HBTs

Sawdai, D., Plouchart, J.-O., Pavlidis, D., Samelis, A., Hong, K.

Année:

1996

Langue:

english

Fichier:

PDF, 414 KB

english, 1996

46

[IEEE Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA (14-18 May 2000)] Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) - High power performance using InAlAas/InGaAs single heterojunction bipolar transistors

Cui, D., Sawdai, D., Pavlidis, D., Hsu, S.S.H., Chin, P., Block, T.

Année:

2000

Langue:

english

Fichier:

PDF, 372 KB

english, 2000

47

[IEEE International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA (12-16 May 2003)] International Conference onIndium Phosphide and Related Materials, 2003. - High indium content metamorphic (In,Al)As/(In,Ga)As heterojunction bipolar transistors

Monier, C., Sawdai, D., Cavus, A., Sandhu, R., Lange, M., Wang, J., Yamamoto, J., Hsing, R., Hayashi, S., Noori, A., Block, T., Goorsky, M.S., Gutieffez-Aitken, A.

Année:

2003

Langue:

english

Fichier:

PDF, 241 KB

english, 2003

48

SPIE Proceedings [SPIE Photonics East '99 - Boston, MA (Sunday 19 September 1999)] Gigahertz Devices and Systems - NPN-PNP InP HBT technology and applications to low-power wireless systems

Pavlidis, Dimitris, Sawdai, Donald, Cui, Delong, Streit, Dwight C.

Année:

1999

Langue:

english

Fichier:

PDF, 550 KB

english, 1999

49

[IEEE APMC 2001. 2001 Asia-Pacific Microwave Conference - Taipei, Taiwan (3-6 Dec. 2001)] APMC 2001. 2001 Asia-Pacific Microwave Conference (Cat. No.01TH8577) - Indium phosphide HEMT and HBT production for microwave and millimeter-wave applications

Streit, D.C., Sawdai, D., Grunbacher, R., Tsai, R., Lai, R., Gutierrez-Aitken, A., Oki, A.

Année:

2001

Fichier:

PDF, 395 KB

2001